Ohun alumọni nitride iwe adehun ohun alumọni carbide
Si3N4 bonded SiC seramiki refractory awọn ohun elo ti, ti wa ni adalu pẹlu ga funfun SIC itanran lulú ati Silicon lulú, lẹhin isokuso dajudaju, lenu sintered labẹ 1400 ~ 1500 ° C.Lakoko iṣẹ ikẹkọ, kikun Nitrogen mimọ giga sinu ileru, lẹhinna ohun alumọni yoo fesi pẹlu Nitrogen ati ṣe ipilẹṣẹ Si3N4, Nitorinaa ohun elo Si3N4 ti o ni asopọ siC jẹ ti ohun alumọni nitride (23%) ati ohun alumọni carbide (75%) bi ohun elo aise akọkọ. , ti a dapọ pẹlu ohun elo Organic, ati apẹrẹ nipasẹ adalu, extrusion tabi idasonu, lẹhinna ṣe lẹhin gbigbẹ ati nitrogenization.
Awọn ẹya ara ẹrọ ati awọn anfani:
1.High otutu ifarada
2.High thermal conductivity ati mọnamọna resistance
3.High darí agbara ati abrasion resistance
4.Excellent agbara agbara ati ipata resistance
A pese awọn ohun elo seramiki NSiC ti o ga didara ati pipe ti o ṣe ilana nipasẹ
1.Slip simẹnti
2.Extruding
3.Uni Axial Titẹ
4.Isostatic Titẹ
Iwe Data Ohun elo
| > Iṣọkan Kemikali | Sic | 75% |
| Si3N4 | ≥23% | |
| Ọfẹ Si | 0% | |
| Ìwọ̀n ńlá (g/cm3) | 2.70～2.80 | |
| Owu ti o han gbangba (%) | 12～15 | |
| Agbara tẹ ni 20 ℃ (MPa) | 180～190 | |
| Agbara tẹ ni 1200 ℃ (MPa) | 207 | |
| Agbara tẹ ni 1350 ℃ (MPa) | 210 | |
| Agbara titẹ ni 20 ℃ (MPa) | 580 | |
| Imudara igbona ni 1200 ℃ (w/mk) | 19.6 | |
| Olusọdipúpọ igbona ni1200 ℃(x 10-6/C) | 4.70 | |
| Gbona mọnamọna resistance | O tayọ | |
| O pọju.iwọn otutu (℃) | 1600 | |
