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2 ~ 6 inch 4 ° pa-igun P-type 4H-SiC sobusitireti

2~6 inch 4° ni pipa-igun P-Iru 4H-SiC Sobusitireti Aworan Ifihan
  • 2 ~ 6 inch 4 ° pa-igun P-type 4H-SiC sobusitireti
  • 2 ~ 6 inch 4 ° pa-igun P-type 4H-SiC sobusitireti

Apejuwe kukuru:

4 ° pipa-igun P-Iru 4H-SiC sobusitireti jẹ ohun elo semikondokito kan pato, nibiti “4 ° pipa-igun” tọka si igun iṣalaye gara ti wafer jẹ awọn iwọn 4 pipa-igun, ati “P-type” tọka si awọn conductivity iru ti awọn semikondokito. Ohun elo yii ni awọn ohun elo pataki ni ile-iṣẹ semikondokito, paapaa ni awọn aaye ti itanna agbara ati ẹrọ itanna igbohunsafẹfẹ giga.


Alaye ọja

ọja Tags

Semicera's 2 ~ 6 inch 4° pipa-igun P-Iru 4H-SiC awọn sobusitireti ti wa ni iṣelọpọ lati pade awọn iwulo dagba ti agbara iṣẹ ṣiṣe giga ati awọn olupese ẹrọ RF. Iṣalaye igun-igun 4° ṣe idaniloju idagbasoke epitaxial iṣapeye, ṣiṣe sobusitireti yii jẹ ipilẹ to dara julọ fun ọpọlọpọ awọn ẹrọ semikondokito, pẹlu MOSFETs, IGBTs, ati diodes.

Eleyi 2 ~ 6 inch 4 ° pa-igun P-type 4H-SiC sobusitireti ni o ni o tayọ awọn ohun elo ti ohun ini, pẹlu ga gbona elekitiriki, o tayọ itanna išẹ, ati ki o dayato si darí iduroṣinṣin. Iṣalaye igun-pipa ṣe iranlọwọ lati dinku iwuwo micropipe ati igbega awọn fẹlẹfẹlẹ epitaxial didan, eyiti o ṣe pataki lati mu ilọsiwaju iṣẹ ati igbẹkẹle ẹrọ semikondokito ikẹhin.

Semicera's 2 ~ 6 inch 4 ° pipa-angle P-type 4H-SiC substrates wa ni orisirisi awọn iwọn ila opin, ti o wa lati 2 inches si 6 inches, lati pade awọn ibeere iṣelọpọ ti o yatọ. Awọn sobusitireti wa ni a ṣe ni deede lati pese awọn ipele doping aṣọ ati awọn abuda oju-giga ti o ga, ni idaniloju pe wafer kọọkan ni ibamu pẹlu awọn pato okun ti o nilo fun awọn ohun elo itanna to ti ni ilọsiwaju.

Ifaramo ti Semicera si ĭdàsĭlẹ ati didara ni idaniloju pe 2 ~ 6 inch 4 ° pa-angle P-type 4H-SiC substrates fi iṣẹ ṣiṣe deede ni ọpọlọpọ awọn ohun elo lati ẹrọ itanna agbara si awọn ẹrọ igbohunsafẹfẹ giga. Ọja yii n pese ojutu ti o gbẹkẹle fun iran ti nbọ ti agbara-daradara, awọn semikondokito iṣẹ-giga, atilẹyin awọn ilọsiwaju imọ-ẹrọ ni awọn ile-iṣẹ bii adaṣe, awọn ibaraẹnisọrọ, ati agbara isọdọtun.

Iwọn-jẹmọ awọn ajohunše

Iwọn

2-inch

4-inch
Iwọn opin 50,8 mm ± 0,38 mm 100,0 mm + 0 / -0,5 mm
Dada Iṣalaye 4 ° si <11-20>± 0.5° 4 ° si <11-20>± 0.5°
Primary Flat Gigun 16,0 mm ± 1.5mm 32.5mm ± 2mm
Secondary Flat Gigun 8,0 mm ± 1.5mm 18,0 mm ± 2 mm
Primary Flat Iṣalaye Parallelto <11-20>±5.0° Parallelto <11-20>± 5.0c
Atẹle Flat Iṣalaye 90 ° CW lati akọkọ ± 5.0 °, ohun alumọni koju soke 90 ° CW lati akọkọ ± 5.0 °, ohun alumọni koju soke
Dada Ipari C-Oju: Opitika Polish, Si-Face: CMP C-Oju: OpticalPolish, Si-Face: CMP
Wafer eti Beveling Beveling
Dada Roughness Si-Face Ra <0.2 nm Si-Face Ra <0.2nm
Sisanra 350.0 ± 25.0um 350.0 ± 25.0um
Polytype 4H 4H
Doping p-Irú p-Irú

Iwọn-jẹmọ awọn ajohunše

Iwọn

 6-inch
Iwọn opin 150,0 mm + 0 / -0,2 mm
Dada Iṣalaye 4 ° si <11-20>± 0.5°
Primary Flat Gigun 47,5 mm ± 1,5mm
Secondary Flat Gigun Ko si
Primary Flat Iṣalaye Ni afiwe si <11-20>± 5.0°
SecondaryFlat Iṣalaye 90 ° CW lati akọkọ ± 5.0 °, ohun alumọni koju soke
Dada Ipari C-Oju: Polish opitika, Si-Face:CMP
Wafer eti Beveling
Dada Roughness Si-Face Ra <0.2 nm
Sisanra 350.0 ± 25.0μm
Polytype 4H
Doping p-Irú

Ramani

2-6 inch 4 ° pa-igun P-Iru 4H-SiC sobusitireti-3

didara julọ ti tẹ

2-6 inch 4 ° pa-igun P-Iru 4H-SiC sobusitireti-4

Ìwọ̀n ìpakúpa (KOH etching)

2-6 inch 4 ° pa-igun P-Iru 4H-SiC sobusitireti-5

KOH etching awọn aworan

2-6 inch 4 ° pa-igun P-Iru 4H-SiC sobusitireti-6
SiC wafers
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