Silicon carbide (SiC) ohun elo kirisita ẹyọkan ni iwọn aafo ẹgbẹ nla kan (~ Si awọn akoko 3), iba ina gbigbona giga (~ Si awọn akoko 3.3 tabi awọn akoko GaAs awọn akoko 10), oṣuwọn ijira itẹlọrun elekitironi giga (~ Awọn akoko 2.5), ina didenukole giga aaye (~ Si 10 igba tabi GaAs 5 igba) ati awọn miiran dayato si abuda.
Awọn ohun elo semikondokito iran kẹta ni akọkọ pẹlu SiC, GaN, diamond, ati bẹbẹ lọ, nitori iwọn aafo ẹgbẹ rẹ (Fun apẹẹrẹ) tobi ju tabi dogba si 2.3 volts elekitironi (eV), ti a tun mọ ni awọn ohun elo aafo jakejado band. Ti a ṣe afiwe pẹlu awọn ohun elo semikondokito iran akọkọ ati keji, awọn ohun elo semikondokito iran kẹta ni awọn anfani ti ina elekitiriki giga, aaye ina gbigbẹ giga, oṣuwọn ijira elekitironi ti o ga ati agbara isunmọ giga, eyiti o le pade awọn ibeere tuntun ti imọ-ẹrọ itanna igbalode fun giga. iwọn otutu, agbara giga, titẹ giga, igbohunsafẹfẹ giga ati resistance itankalẹ ati awọn ipo lile miiran. O ni awọn ifojusọna ohun elo pataki ni awọn aaye ti aabo orilẹ-ede, ọkọ oju-ofurufu, afẹfẹ, iṣawari epo, ibi ipamọ opiti, ati bẹbẹ lọ, ati pe o le dinku pipadanu agbara nipasẹ diẹ sii ju 50% ni ọpọlọpọ awọn ile-iṣẹ ilana gẹgẹbi awọn ibaraẹnisọrọ gbooro, agbara oorun, iṣelọpọ ọkọ ayọkẹlẹ, ina semikondokito, ati akoj smart, ati pe o le dinku iwọn ohun elo nipasẹ diẹ sii ju 75%, eyiti o jẹ pataki pataki fun idagbasoke imọ-ẹrọ ati imọ-ẹrọ eniyan.
Agbara Semicera le pese awọn alabara pẹlu Didara Didara to gaju (Conductive), Ologbele-idabobo (Semi-insulating), HPSI (High Purity ologbele-insulating) sobusitireti silikoni carbide; Ni afikun, a le pese awọn onibara pẹlu isokan ati orisirisi silikoni carbide epitaxial sheets; A tun le ṣe akanṣe iwe epitaxial ni ibamu si awọn iwulo pataki ti awọn alabara, ati pe ko si iwọn aṣẹ ti o kere ju.
WAFERING ni pato
*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating
| Nkan | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| TTV(GBIR) | ≤6um | ≤6um | |||
| Teriba (GF3YFCD) -Iye to peye | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| LTV (SBIR) -10mmx10mm | <2μm | ||||
| Wafer eti | Beveling | ||||
Ipari dada
*n-Pm=n-iru Pm-Grade,n-Ps=n-Iru Ps-Grade,Sl=Ogbede-Idabobo
| ltem | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Ps | SI | SI | |
| Dada Ipari | Polish Optical ẹgbẹ meji, Si- Face CMP | ||||
| SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm C-Oju Ra≤ 0.5nm | (5umx5um) Si-Face Ra≤0.2nm C-Oju Ra≤0.5nm | |||
| Awọn eerun eti | Ko si Gbigbanilaaye (ipari ati iwọn≥0.5mm) | ||||
| Indents | Ko Si Iyọọda | ||||
| Awọn idọti (Si-Face) | Qty.≤5, Akopọ Ipari≤0.5× iwọn ila opin wafer | Qty.≤5, Akopọ Ipari≤0.5× iwọn ila opin wafer | Qty.≤5, Akopọ Ipari≤0.5× iwọn ila opin wafer | ||
| Awọn dojuijako | Ko Si Iyọọda | ||||
| Iyasoto eti | 3mm | ||||
