Silicon carbide (SiC) ohun elo kirisita ẹyọkan ni iwọn aafo ẹgbẹ nla kan (~ Si awọn akoko 3), iba ina gbigbona giga (~ Si awọn akoko 3.3 tabi awọn akoko GaAs awọn akoko 10), oṣuwọn ijira itẹlọrun elekitironi giga (~ Awọn akoko 2.5), ina didenukole giga aaye (~ Si 10 igba tabi GaAs 5 igba) ati awọn miiran dayato si abuda.
Agbara Semicera le pese awọn alabara pẹlu Didara Didara to gaju (Conductive), Ologbele-idabobo (Semi-insulating), HPSI (High Purity ologbele-insulating) sobusitireti silikoni carbide; Ni afikun, a le pese awọn onibara pẹlu isokan ati orisirisi silikoni carbide epitaxial sheets; A tun le ṣe akanṣe iwe epitaxial ni ibamu si awọn iwulo pataki ti awọn alabara, ati pe ko si iwọn aṣẹ ti o kere ju.
| Awọn nkan | Ṣiṣejade | Iwadi | Idiwon |
| Crystal paramita | |||
| Polytype | 4H | ||
| Dada Iṣalaye aṣiṣe | <11-20>4±0.15° | ||
| Itanna paramita | |||
| Dopant | n-iru Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Awọn paramita ẹrọ | |||
| Iwọn opin | 99.5 - 100mm | ||
| Sisanra | 350± 25 μm | ||
| Iṣalaye alapin akọkọ | [1-100]±5° | ||
| Ipari alapin akọkọ | 32.5 ± 1.5mm | ||
| Atẹle alapin ipo | 90 ° CW lati alapin akọkọ ± 5 °. silikoni koju soke | ||
| Atẹle alapin ipari | 18± 1.5mm | ||
| TTV | ≤5 μm | ≤10 μm | ≤20 μm |
| LTV | ≤2 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | NA |
| Teriba | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Ogun | ≤20 μm | ≤45 μm | ≤50 μm |
| Iwaju (Si-oju) líle (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ilana | |||
| iwuwo Micropipe | ≤1 ea/cm2 | ≤5 ea/cm2 | ≤10 ea/cm2 |
| Irin impurities | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Didara iwaju | |||
| Iwaju | Si | ||
| Ipari dada | Si-oju CMP | ||
| Awọn patikulu | ≤60ea/wafer (iwọn≥0.3μm) | NA | |
| Scratches | ≤2ea/mm. Akopọ ipari ≤Iwọn ila opin | Akopọ ipari≤2*Iwọn ila opin | NA |
| Peeli osan / pits / awọn abawọn / striations / dojuijako / idoti | Ko si | NA | |
| Awọn eerun eti / indents / ṣẹ egungun / hex farahan | Ko si | NA | |
| Awọn agbegbe Polytype | Ko si | Agbegbe akojo≤20% | Agbegbe akopọ≤30% |
| Iwaju lesa siṣamisi | Ko si | ||
| Didara Pada | |||
| Pada pari | C-oju CMP | ||
| Scratches | ≤5ea/mm, Akopọ ipari≤2*Iwọn ila opin | NA | |
| Awọn abawọn ẹhin (awọn eerun eti/awọn indents) | Ko si | ||
| Pada roughness | Ra≤0.2nm (5μm*5μm) | ||
| Pada lesa siṣamisi | 1 mm (lati eti oke) | ||
| Eti | |||
| Eti | Chamfer | ||
| Iṣakojọpọ | |||
| Iṣakojọpọ | Apo inu ti kun pẹlu nitrogen ati apo ita ti wa ni igbale. Olona-wafer kasẹti, epi-setan. | ||
| * Awọn akọsilẹ: "NA" tumọ si pe ko si ibeere Awọn nkan ti a ko mẹnuba le tọka si SEMI-STD. | |||
