1.NipaSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers ti wa ni akoso nipasẹ fifipamọ Layer okuta kan lori wafer nipa lilo ohun alumọni carbide kan wafer kirisita kan gẹgẹbi sobusitireti, nigbagbogbo nipasẹ ifasilẹ orule kemikali (CVD). Lara wọn, ohun alumọni carbide epitaxial ti wa ni pese sile nipa dagba ohun alumọni carbide epitaxial Layer lori conductive ohun alumọni carbide sobusitireti, ati ki o siwaju sii sinu awọn ẹrọ to ga-išẹ.
2.Silikoni Carbide Epitaxial WaferAwọn pato
A le pese 4, 6, 8 inches N-type 4H-SiC epitaxial wafers. Wafer epitaxial naa ni bandiwidi nla, iyara fifo elekitironi itẹlọrun giga, gaasi elekitironi onisẹpo meji giga, ati agbara aaye didenukole giga. Awọn ohun-ini wọnyi jẹ ki ẹrọ naa jẹ ki o ni iwọn otutu giga, resistance foliteji giga, iyara iyipada iyara, kekere lori resistance, iwọn kekere ati iwuwo ina.
3. Awọn ohun elo SiC Epitaxial
SiC epitaxial waferti wa ni o kun lo ni Schottky diode (SBD), metal oxide semikondokito aaye ipa transistor (MOSFET) junction oko ipa transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), idabobo ẹnu bipolar transistor (IGBT), eyi ti o ti lo ni kekere-foliteji, alabọde-foliteji ati ki o ga-foliteji oko. Lọwọlọwọ,SiC epitaxial wafersfun awọn ohun elo giga-giga ni o wa ninu iwadi ati idagbasoke ipele agbaye.
