Silicon carbide (SiC) ohun elo kirisita ẹyọkan ni iwọn aafo ẹgbẹ nla kan (~ Si awọn akoko 3), iba ina gbigbona giga (~ Si awọn akoko 3.3 tabi awọn akoko GaAs awọn akoko 10), oṣuwọn ijira itẹlọrun elekitironi giga (~ Awọn akoko 2.5), ina didenukole giga aaye (~ Si 10 igba tabi GaAs 5 igba) ati awọn miiran dayato si abuda.
Awọn ohun elo semikondokito iran kẹta ni akọkọ pẹlu SiC, GaN, diamond, ati bẹbẹ lọ, nitori iwọn aafo ẹgbẹ rẹ (Fun apẹẹrẹ) tobi ju tabi dogba si 2.3 volts elekitironi (eV), ti a tun mọ ni awọn ohun elo aafo jakejado band. Ti a ṣe afiwe pẹlu awọn ohun elo semikondokito iran akọkọ ati keji, awọn ohun elo semikondokito iran kẹta ni awọn anfani ti ina elekitiriki giga, aaye ina gbigbẹ giga, oṣuwọn ijira elekitironi ti o ga ati agbara isunmọ giga, eyiti o le pade awọn ibeere tuntun ti imọ-ẹrọ itanna igbalode fun giga. iwọn otutu, agbara giga, titẹ giga, igbohunsafẹfẹ giga ati resistance itankalẹ ati awọn ipo lile miiran. O ni awọn ifojusọna ohun elo pataki ni awọn aaye ti aabo orilẹ-ede, ọkọ oju-ofurufu, afẹfẹ, iṣawari epo, ibi ipamọ opiti, ati bẹbẹ lọ, ati pe o le dinku pipadanu agbara nipasẹ diẹ sii ju 50% ni ọpọlọpọ awọn ile-iṣẹ ilana gẹgẹbi awọn ibaraẹnisọrọ gbooro, agbara oorun, iṣelọpọ ọkọ ayọkẹlẹ, ina semikondokito, ati akoj smart, ati pe o le dinku iwọn ohun elo nipasẹ diẹ sii ju 75%, eyiti o jẹ pataki pataki fun idagbasoke imọ-ẹrọ ati imọ-ẹrọ eniyan.
Agbara Semicera le pese awọn alabara pẹlu Didara Didara to gaju (Conductive), Ologbele-idabobo (Semi-insulating), HPSI (High Purity ologbele-insulating) sobusitireti silikoni carbide; Ni afikun, a le pese awọn onibara pẹlu isokan ati orisirisi silikoni carbide epitaxial sheets; A tun le ṣe akanṣe iwe epitaxial ni ibamu si awọn iwulo pataki ti awọn alabara, ati pe ko si iwọn aṣẹ ti o kere ju.
| Awọn nkan | Ṣiṣejade | Iwadi | Idiwon |
| Crystal paramita | |||
| Polytype | 4H | ||
| Dada Iṣalaye aṣiṣe | <11-20>4±0.15° | ||
| Itanna paramita | |||
| Dopant | n-iru Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Awọn paramita ẹrọ | |||
| Iwọn opin | 150.0 ± 0.2mm | ||
| Sisanra | 350± 25 μm | ||
| Iṣalaye alapin akọkọ | [1-100]±5° | ||
| Ipari alapin akọkọ | 47,5 ± 1.5mm | ||
| Atẹle alapin | Ko si | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Teriba | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Ijagun | ≤35 μm | ≤45 μm | ≤55 μm |
| Iwaju (Si-oju) líle (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ilana | |||
| iwuwo Micropipe | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Irin impurities | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Didara iwaju | |||
| Iwaju | Si | ||
| Ipari dada | Si-oju CMP | ||
| Awọn patikulu | ≤60ea/wafer (iwọn≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Akopọ ipari ≤Iwọn ila opin | Akopọ ipari≤2*Iwọn ila opin | NA |
| Peeli Orange / Pits / awọn abawọn / striations / dojuijako / idoti | Ko si | NA | |
| Awọn eerun eti / indents / fifọ / awọn awo hex | Ko si | ||
| Awọn agbegbe Polytype | Ko si | Agbegbe akojo≤20% | Agbegbe akojọpọ≤30% |
| Iwaju lesa siṣamisi | Ko si | ||
| Didara Pada | |||
| Pada pari | C-oju CMP | ||
| Scratches | ≤5ea/mm, Akopọ ipari≤2*Iwọn ila opin | NA | |
| Awọn abawọn ẹhin (awọn eerun eti/awọn indents) | Ko si | ||
| Pada roughness | Ra≤0.2nm (5μm*5μm) | ||
| Pada lesa siṣamisi | 1 mm (lati eti oke) | ||
| Eti | |||
| Eti | Chamfer | ||
| Iṣakojọpọ | |||
| Iṣakojọpọ | Epi-ṣetan pẹlu apoti igbale Olona-wafer kasẹti apoti | ||
| * Awọn akọsilẹ: "NA" tumọ si pe ko si ibeere Awọn nkan ti a ko mẹnuba le tọka si SEMI-STD. | |||
-
Giga ti nw ohun alumọni carbide gara ọkọ oju omi gbigbe ...
-
Ga ti nw la kọja tantalum carbide ti a bo agba
-
Reaction sintered ohun alumọni carbide wafer ọkọ
-
Tantalum carbide ti o ni la kọja, ohun elo aaye gbigbona fun ...
-
Aṣa CVD Tantalum carbide bo awọn ẹya ara
-
Tantalum Carbide Ti a bo Wafer Susceptor