SiC apọju

Apejuwe kukuru:

Semicera nfunni fiimu tinrin aṣa (silicon carbide) SiC epitaxy lori awọn sobusitireti fun idagbasoke awọn ẹrọ ohun alumọni carbide. Weitai ti pinnu lati pese awọn ọja didara ati awọn idiyele ifigagbaga, ati pe a nireti lati jẹ alabaṣepọ igba pipẹ rẹ ni Ilu China.

 

Alaye ọja

ọja Tags

SiC epitaxy (2)(1)

ọja Apejuwe

4h-n 4inch 6inch dia100mm sic irugbin wafer 1mm sisanra fun idagbasoke ingot

Iwọn ti a ṣe adani / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / Iwa mimọ giga 4H-N 4inch 6inch dia 150mm silikoni carbide single crystal (sic) awọn sobsitireti wafersS / Adani bi-ge sic wafersProduction 4inch ite 4H-N 1.5mm SIC Wafers fun irugbin gara

Nipa Silicon Carbide (SiC) Crystal

Silicon carbide (SiC), ti a tun mọ si carborundum, jẹ semikondokito ti o ni ohun alumọni ati erogba pẹlu agbekalẹ kemikali SiC. A lo SiC ni awọn ẹrọ itanna eletiriki ti o ṣiṣẹ ni awọn iwọn otutu giga tabi awọn foliteji giga, tabi mejeeji.SiC tun jẹ ọkan ninu awọn paati LED pataki, o jẹ sobusitireti olokiki fun awọn ẹrọ GaN ti o dagba, ati pe o tun ṣe iranṣẹ bi itankale ooru ni giga- awọn LED agbara.

Apejuwe

Ohun ini

4H-SiC, Nikan Crystal

6H-SiC, Nikan Crystal

Lattice Parameters

a=3.076 Å c=10.053 Å

a=3.073 Å c=15.117 Å

Stacking Ọkọọkan

ABCB

ABCACB

Mohs Lile

≈9.2

≈9.2

iwuwo

3,21 g / cm3

3,21 g / cm3

Them. Imugboroosi olùsọdipúpọ

4-5× 10-6/K

4-5× 10-6/K

Refraction Atọka @ 750nm

ko si = 2.61
awon = 2.66

ko si = 2,60
ne = 2,65

Dielectric Constant

c~9.66

c~9.66

Imudara Ooru (Iru N, 0.02 ohm.cm)

a ~ 4.2 W/cm·K@298K
c ~ 3.7 W / cm · K @ 298K

 

Imudara Ooru (idabobo ologbele)

a ~ 4.9 W/cm·K@298K
c ~ 3.9 W / cm · K @ 298K

a ~ 4.6 W/cm·K@298K
c ~ 3.2 W / cm · K @ 298K

Ẹgbẹ-aafo

3,23 eV

3.02 eV

Fa-isalẹ Electrical Field

3-5× 106V / cm

3-5× 106V / cm

Ekunrere fiseete Sisa

2.0× 105m/s

2.0× 105m/s

SiC wafers

Semicera Work ibi Ibi iṣẹ Semicera 2 Ẹrọ ẹrọ CNN processing, kemikali ninu, CVD bo Iṣẹ wa


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