Silikoni carbide jẹ iru carbide sintetiki pẹlu moleku SiC. Nigbati o ba ni agbara, siliki ati erogba ni a maa n ṣẹda ni awọn iwọn otutu giga ju 2000°C. Silikoni carbide ni iwuwo imọ-jinlẹ ti 3.18g/cm3, lile Mohs kan ti o tẹle diamond, ati microhardness ti 3300kg/mm3 laarin 9.2 ati 9.8. Nitori líle giga rẹ ati resistance wiwọ giga, o ni awọn abuda ti resistance otutu otutu ati pe o lo fun ọpọlọpọ awọn sooro, sooro ipata ati awọn ẹya ẹrọ iwọn otutu giga. O jẹ iru tuntun ti imọ-ẹrọ seramiki sooro.
1. Kemikali-ini.
(1) Afẹfẹ Afẹfẹ: Nigbati ohun elo carbide ohun alumọni ti jẹ kikan si 1300 ° C ninu afẹfẹ, Layer aabo ohun alumọni yoo bẹrẹ lati ṣe ipilẹṣẹ lori dada ti ohun alumọni carbide crystal. Pẹlu sisanra ti Layer aabo, ohun alumọni ohun alumọni inu inu tẹsiwaju lati oxidize, ki ohun alumọni carbide ni o ni awọn ti o dara ifoyina resistance. Nigbati iwọn otutu ba de diẹ sii ju 1900K (1627 ° C), fiimu aabo silikoni dioxide bẹrẹ lati bajẹ, ati ifoyina ti ohun alumọni carbide ti pọ si, nitorinaa 1900K jẹ iwọn otutu iṣẹ ti ohun alumọni carbide ni oju-aye oxidizing.
(2) Acid ati alkali resistance: nitori ipa ti fiimu aabo silikoni dioxide, silikoni carbide ni awọn ohun-ini ni ipa ti fiimu aabo silikoni dioxide.
2, Ti ara ati darí-ini.
(1) iwuwo: iwuwo patiku ti ọpọlọpọ awọn kirisita ohun alumọni carbide jẹ isunmọ pupọ, ni gbogbogbo ti a gba pe o jẹ 3.20g / mm3, ati iwuwo iṣakojọpọ adayeba ti awọn abrasives siliki carbide jẹ laarin 1.2-1.6g / mm3, da lori iwọn patiku, tiwqn iwọn patiku ati patiku iwọn apẹrẹ.
(2) Lile: Agbara Mohs ti silicon carbide jẹ 9.2, micro-density of Wessler jẹ 3000-3300kg / mm2, líle ti Knopp jẹ 2670-2815kg / mm, abrasive ga ju corundum lọ, ti o sunmọ si diamond, cubic boron nitride ati boron carbide.
(3) Imudani ti o gbona: awọn ọja ohun alumọni silikoni ni imudara igbona giga, olusọdipupọ igbona igbona kekere, resistance mọnamọna gbona giga, ati pe o jẹ awọn ohun elo ifasilẹ didara giga.
3, Itanna-ini.
| Nkan | Ẹyọ | Data | Data | Data | Data | Data |
| RBsic(siic) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC akoonu | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Akoonu ohun alumọni ọfẹ | % | 15 | 0 | 0 | 0 | 0 |
| Iwọn otutu iṣẹ ti o pọju | ℃ | 1380 | 1450 | 1650 | Ọdun 1620 | 1400 |
| iwuwo | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Ṣii porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Agbara atunse 20℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Agbara atunse 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modulu ti rirọ 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulu ti rirọ 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Ooru elekitiriki 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| olùsọdipúpọ ti thermalexpansion | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
