Ile-iṣẹ wa peseSiC ti a boawọn iṣẹ ilana lori dada ti graphite, awọn ohun elo amọ ati awọn ohun elo miiran nipasẹ ọna CVD, nitorinaa awọn gaasi pataki ti o ni erogba ati ohun alumọni le fesi ni iwọn otutu giga lati gba awọn ohun elo Sic mimọ-giga, eyiti o le gbe silẹ lori oju awọn ohun elo ti a bo lati ṣe agbekalẹ kanSiC aabo Layerfun epitaxy agba iru hy pnotic.
Awọn ẹya akọkọ:
1 .High ti nw SiC ti a bo lẹẹdi
2. Superior ooru resistance & thermal uniformity
3. O daraSiC gara ti a bofun a dan dada
4. Agbara giga lodi si mimọ kemikali
Main pato tiCVD-SIC Aso
| Awọn ohun-ini SiC-CVD | ||
| Crystal Be | FCC β ipele | |
| iwuwo | g/cm³ | 3.21 |
| Lile | Vickers líle | 2500 |
| Iwọn Ọkà | μm | 2 ~ 10 |
| Kẹmika Mimọ | % | 99.99995 |
| Agbara Ooru | J·k-1 · K-1 | 640 |
| Sublimation otutu | ℃ | 2700 |
| Agbara Felexural | MPa (RT 4-ojuami) | 415 |
| Modulu ọdọ | Gpa (4pt tẹ, 1300℃) | 430 |
| Imugboroosi Gbona (CTE) | 10-6K-1 | 4.5 |
| Gbona elekitiriki | (W/mK) | 300 |
