Awọn anfani
Agbara ifoyina otutu giga
O tayọ Ipata resistance
Ti o dara abrasion resistance
Ga olùsọdipúpọ ti ooru elekitiriki
Lubricity ti ara ẹni, iwuwo kekere
Lile giga
Apẹrẹ ti adani.
Awọn ohun elo
-Agba-sooro aaye: bushing, awo, sandblasting nozzle, cyclone lining, lilọ agba, ati be be lo ...
-Iwọn otutu aaye giga: siC Slab, Quenching Furnace Tube, Tube Radiant, crucible, Element Alapapo, Roller, Beam, Heat Exchanger, Tutu Air Pipe, Burner Nozzle, Thermocouple Tube, SiC ọkọ, Kiln ọkọ ayọkẹlẹ Be, Setter, ati be be lo.
-Silicon Carbide Semikondokito: SiC wafer ọkọ, sic chuck,sic paddle, sic kasẹti, sic tan kaakiri tube, wafer orita, afamora awo, guideway, ati be be lo.
Silicon Carbide Seal Field: gbogbo iru oruka lilẹ, gbigbe, bushing, bbl
-Photovoltaic Field: Cantilever Paddle, Lilọ Barrel, Silicon Carbide Roller, ati be be lo.
-Litiumu Batiri Field
Ti ara Properties Of SiC
| Ohun ini | Iye | Ọna |
| iwuwo | 3,21 g/cc | Rin-leefofo ati apa miran |
| Ooru pato | 0,66 J/g °K | Pulsed lesa filasi |
| Agbara Flexural | 450 MPa560 MPa | 4 ojuami tẹ, RT4 ojuami tẹ, 1300 ° |
| Egugun lile | 2,94 MPa m1/2 | Microindentation |
| Lile | 2800 | Vicker ká, 500g fifuye |
| Rirọ ModulusYoung ká Modul | 450 GPa430 GPA | 4 pt tẹ, RT4 pt tẹ, 1300 °C |
| Iwọn ọkà | 2 - 10 µm | SEM |
Gbona Properties Of SiC
| Gbona Conductivity | 250 W/m °K | Lesa filasi ọna, RT |
| Imugboroosi Gbona (CTE) | 4.5 x 10-6 °K | Iwọn otutu yara si 950 °C, silica dilatometer |
Imọ paramita
| Nkan | Ẹyọ | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC akoonu | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Akoonu ohun alumọni ọfẹ | % | 15 | 0 | 0 | 0 | 0 |
| Iwọn otutu iṣẹ ti o pọju | ℃ | 1380 | 1450 | 1650 | Ọdun 1620 | 1400 |
| iwuwo | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Ṣii porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Agbara atunse 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Agbara atunse 1200 ℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulu ti rirọ 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulu ti rirọ 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Ooru elekitiriki 1200 ℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| olùsọdipúpọ ti gbona imugboroosi | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
Awọn ohun alumọni ohun alumọni CVD ti a bo lori awọn lode dada ti recrystallized ohun alumọni carbide seramiki awọn ọja le de ọdọ kan ti nw ti diẹ ẹ sii ju 99.9999% lati pade awọn aini ti awọn onibara ninu awọn semikondokito ile ise.
