Gallium Nitride Substrates|GaN Wafers

Apejuwe kukuru:

Gallium nitride (GaN), bii awọn ohun elo ohun alumọni carbide (SiC), jẹ ti iran kẹta ti awọn ohun elo semikondokito pẹlu iwọn aafo band jakejado, pẹlu iwọn aafo band nla, iba ina gbigbona giga, oṣuwọn ijira itẹlọrun elekitironi giga, ati pipin ina mọnamọna giga ti dayato abuda.Awọn ẹrọ GaN ni ọpọlọpọ awọn ifojusọna ohun elo ni igbohunsafẹfẹ giga, iyara giga ati awọn aaye ibeere agbara giga gẹgẹbi ina fifipamọ agbara LED, ifihan asọtẹlẹ laser, awọn ọkọ agbara tuntun, akoj smart, ibaraẹnisọrọ 5G.


Alaye ọja

ọja Tags

GaN Wafers

Awọn ohun elo semikondokito iran kẹta ni akọkọ pẹlu SiC, GaN, diamond, ati bẹbẹ lọ, nitori iwọn aafo ẹgbẹ rẹ (Fun apẹẹrẹ) tobi ju tabi dogba si 2.3 volts elekitironi (eV), ti a tun mọ ni awọn ohun elo aafo jakejado band. Ti a ṣe afiwe pẹlu awọn ohun elo semikondokito iran akọkọ ati keji, awọn ohun elo semikondokito iran kẹta ni awọn anfani ti ina elekitiriki giga, aaye ina gbigbẹ giga, oṣuwọn ijira elekitironi ti o ga ati agbara isunmọ giga, eyiti o le pade awọn ibeere tuntun ti imọ-ẹrọ itanna igbalode fun giga. iwọn otutu, agbara giga, titẹ giga, igbohunsafẹfẹ giga ati resistance itankalẹ ati awọn ipo lile miiran. O ni awọn ifojusọna ohun elo pataki ni awọn aaye ti aabo orilẹ-ede, ọkọ oju-ofurufu, afẹfẹ, iṣawari epo, ibi ipamọ opiti, ati bẹbẹ lọ, ati pe o le dinku pipadanu agbara nipasẹ diẹ sii ju 50% ni ọpọlọpọ awọn ile-iṣẹ ilana gẹgẹbi awọn ibaraẹnisọrọ gbooro, agbara oorun, iṣelọpọ ọkọ ayọkẹlẹ, ina semikondokito, ati akoj smart, ati pe o le dinku iwọn ohun elo nipasẹ diẹ sii ju 75%, eyiti o jẹ pataki pataki fun idagbasoke imọ-ẹrọ ati imọ-ẹrọ eniyan.

 

Nkan 项目

GaN-FS-CU-C50

GaN-FS-CN-C50

GaN-FS-C-SI-C50

Iwọn opin
晶圆直径

50,8 ± 1 mm

Sisanra厚度

350 ± 25 μm

Iṣalaye
晶向

C ofurufu (0001) kuro ni igun si M-axis 0.35 ± 0.15°

NOMBA Flat
主定位边

(1-100) 0 ± 0.5°, 16 ± 1 mm

Atẹle Flat
次定位边

(11-20) 0 ± 3 °, 8 ± 1 mm

Iwa ihuwasi
导电性

N-iru

N-iru

Ologbele-Idabobo

Atako (300K)
电阻率

<0.1 Ω·cm

<0.05 Ω·cm

> 106 Ω·cm

TTV
平整度

≤ 15 μm

teriba
弯曲度

≤20 μm

Ga Face dada Roughness
Ga面粗糙度

<0.2 nm (didan);

tabi <0.3 nm (didan ati itọju dada fun epitaxy)

N Face Dada Roughness
N面粗糙度

0.5 ~ 1.5 μm

aṣayan: 1 ~ 3 nm (ilẹ ti o dara); <0.2 nm (didan)

Dislocation iwuwo
位错密度

Lati 1 x 105 si 3 x 106 cm-2 (ṣe iṣiro nipasẹ CL)*

Makiro Àìpé iwuwo
缺陷密度

<2 cm-2

Agbegbe to wulo
有效面积

> 90% (iyasoto eti ati abawọn Makiro)

Le ṣe adani ni ibamu si awọn ibeere alabara, eto oriṣiriṣi ti ohun alumọni, oniyebiye, SiC orisun GaN epitaxial dì.

Semicera Work ibi Ibi iṣẹ Semicera 2 Ẹrọ ẹrọ CNN processing, kemikali ninu, CVD bo Iṣẹ wa


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