Silicon Carbide SiC Ti a bo Epitaxial Reactor Barrel

Ohun alumọni Carbide SiC Ti a bo Epitaxial Reactor Barrel Ifihan Aworan

Apejuwe kukuru:

Semicera nfunni ni iwọn okeerẹ ti awọn alailagbara ati awọn paati graphite ti a ṣe apẹrẹ fun ọpọlọpọ awọn reactors epitaxy.

Nipasẹ awọn ajọṣepọ ilana pẹlu awọn OEM oludari ile-iṣẹ, imọ-jinlẹ awọn ohun elo, ati awọn agbara iṣelọpọ ilọsiwaju, Semicera n pese awọn apẹrẹ ti a ṣe lati pade awọn ibeere pataki ti ohun elo rẹ.Ifaramo wa si didara julọ ṣe idaniloju pe o gba awọn solusan ti o dara julọ fun awọn aini riakito epitaxy rẹ.

Fi imeeli ranṣẹ si wa

Alaye ọja

ọja Tags

Ile-iṣẹ wa peseSiC ti a boawọn iṣẹ ilana lori dada ti graphite, awọn ohun elo amọ ati awọn ohun elo miiran nipasẹ ọna CVD, nitorinaa awọn gaasi pataki ti o ni erogba ati ohun alumọni le fesi ni iwọn otutu giga lati gba awọn ohun elo Sic mimọ-giga, eyiti o le fi silẹ lori oju awọn ohun elo ti a bo lati ṣe agbekalẹ kanSiC aabo Layerfun epitaxy agba iru hy pnotic.

Awọn ẹya akọkọ:

1 .High ti nw SiC ti a bo lẹẹdi

2. Superior ooru resistance & thermal uniformity

3. O daraSiC gara ti a bofun a dan dada

4. Agbara giga lodi si mimọ kemikali

Silicon Carbide SiC Ti a bo Epitaxial Reactor Barrel

Main pato tiCVD-SIC Aso

Awọn ohun-ini SiC-CVD
Crystal Be	FCC β ipele
iwuwo	g/cm³	3.21
Lile	Vickers líle	2500
Iwọn Ọkà	μm	2 ~ 10
Kẹmika ti nw	%	99.99995
Agbara Ooru	J·k-1 · K-1	640
Sublimation otutu	℃	2700
Agbara Felexural	MPa (RT 4-ojuami)	415
Modulu ọdọ	Gpa (4pt tẹ, 1300℃)	430
Imugboroosi Gbona (CTE)	10-6K-1	4.5
Gbona elekitiriki	(W/mK)	300